Laser induced flow Ge-O based materials

Details Laser induced flow Ge-O based materials Laser induced flow Ge-O based materials

1982-01-15

1984-02-14

Albritton, C. L.

Electric heating

Metal heating

By arc

219121L, 219121LF, B23K 2700

Patent

active

044319002

ABSTRACT:
In a semiconductor device, laser energy is used to selectively heat various SiO.sub.2 and/or GeO.sub.2 based materials to elevated temperatures while maintaining the active device region and electrical interconnects at relatively low temperatures, to for example, induce densification and/or flow of the SiO.sub.2 and/or GeO.sub.2 based material to round off sharp edges and stops, without damaging or affecting the active region and electrical interconnects.

REFERENCES:
patent: 3542572 (1970-11-01), Dalton et al.
patent: 4284659 (1981-08-01), Vaccodine et al.
Hitachi Seisakusho et al., Abstract of S.N. 114355, Pub. 10/78, Japan.

Affiliated with

Also associated with

Rating

Laser induced flow Ge-O based materials does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Laser induced flow Ge-O based materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser induced flow Ge-O based materials will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2376740