Laser induced deposition of GaAs

Chemistry: electrical and wave energy – Processes and products

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C25D 502

Patent

active

045781575

ABSTRACT:
A method for high resolution maskless deposition of metals onto GaAs without application of an electrical potential by contacting a GaAs workpiece with an electroplating solution and directing a laser beam through the solution onto the GaAs to locally achieve plating.

REFERENCES:
patent: 3013955 (1961-12-01), Roberts
patent: 3506545 (1970-04-01), Garwin
patent: 3529961 (1970-09-01), Schaefer
patent: 3762938 (1973-10-01), Ridenour et al.
patent: 4144139 (1979-03-01), Durkee
patent: 4217183 (1980-08-01), Melcher
patent: 4239789 (1980-12-01), Blum et al.
patent: 4251327 (1981-02-01), Grenon
patent: 4324854 (1982-04-01), Beauchamp et al.
patent: 4340617 (1982-07-01), Deutsch et al.
patent: 4349583 (1982-09-01), Kulynych et al.
patent: 4399004 (1983-08-01), Buckley
patent: 4425196 (1984-01-01), Bessette

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