Laser-induced chemical vapor deposition of thin-film conductors

Coating processes – Direct application of electrical – magnetic – wave – or... – Chemical vapor deposition

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427585, 427 96, 427140, 427252, B05D 306, B05D 512

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052467457

ABSTRACT:
Control of the local environment during pulsed laser removal of thin film circuit metallurgy is used to change the nature of the top surfaces. Interconnecting such laser treated surfaces with LCVD films results in different growth morphologies, dependent on the nature of the surface created and the debris generated during the ablation process. Flowing helium across the surface during the ablation process results in improved growth morphologies for the same laser writing conditions. A low power laser scan is used to induce metal deposition on the substrate without surface damage. This is followed by several scans at an intermediate laser power to deposit the desired thickness of metal (e.g., about 8 .mu.m). Lastly, a high power laser scan is used, either at the points of intersection between the existing metallurgy and the metal repair or across the entire deposit area. Thermal spreading or blooming is reduced by modulating the intensity of the laser source.

REFERENCES:
patent: 4711790 (1987-12-01), Morishige
patent: 4880959 (1989-11-01), Baum et al.
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"Kinetics of laser-induced chemical vapor deposition of gold," by T. T. Kodas, T. H. Baum and P. B. Comita; J. Appl. Phys. 62 (1), Jul. 1, 1987.
"Laser chemcial vapor deposition: A technique for selective area deposition", S. D. Allen; J. Appl. Phys. 52(11), Nov. 1991.
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"High-resolution electron-beam induced deposition"; H. W. P. Koops, R. Weiel and D. P. Kern; J. Vac. Sc. Technol. B6(1); Jan./Feb. 1988; pp. 477-481.
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"Gold Crystal Growth By Photothermal Laser-Induced Chemical Vapor Deposition"; Toivo T. Kodas, T. H. Baum & Paul B. Comita; Journal of Crystal Growth 87 (1988) 378-382.

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