Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Patent
1990-12-26
1995-10-17
Buczinski, Stephen C.
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
25037006, 2503384, 25033901, 257290, 359241, G01T 124, G01J 520, H01L 2714
Patent
active
054593212
ABSTRACT:
A protective layer laser hardens an optical detector. The material for the rotective layer is Hg.sub.1-Y Cd.sub.Y Te, where Y is selected so that the band gap of the protective layer is higher than the expected energy level for photons impinging on the protective layer. Photons with energy levels lower than the band gap are transmitted by the protective layer while photons exceeding the band gap energy level are absorbed or reflected by the protective layer. A semiconductor junction can be formed on the opposite side of the substrate from a Hg.sub.X Cd.sub.X Te layer with a band gap lower than the expected energy level, so that photons transmitted through the substrate are absorbed in the Hg.sub.X Cd.sub.X Te layer and, therefore, detected at the junction. At sufficiently high intensities where detector damage could result, the protective layer switches so that the incident photons are either absorbed or reflected, thus protecting the detector from damage.
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Bartoli Filbert J.
Hoffman Craig A.
Lindle James R.
Meyer Jerry R.
Buczinski Stephen C.
McDonnell Thomas E.
Stockstill Charles J.
The United States of America as represented by the Secretary of
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