Laser generated stress waves for stiction repair

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal

Reexamination Certificate

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C438S050000, C438S052000

Reexamination Certificate

active

07435611

ABSTRACT:
Methods and apparatus are presented to release stiction between suspended structures and the underlying surface in freestanding MEMS structures. A nanosecond rise time stress wave is launched on the backside of the Si substrate by impinging a short-duration Nd:YAG laser pulse onto a small area. The compressive stress wave propagates through the Si substrate and arrives at the site of several stiction-failed cantilevers on the front Si surface. The compressive stress wave propagates through the cantilevered structures and is reflected into a tensile wave from their free surfaces. The returning tensile wave pries off the interface, releasing the cantilevers.

REFERENCES:
patent: 6300756 (2001-10-01), Sturm et al.
patent: 6433463 (2002-08-01), Lai et al.
Fushinobu et al. “Ultrashort-pulse laser heating of silicon to reduce microstructure adhesion” Int. J. Heat Mass Transfer, vol. 39, No. 15, pp. 3181-3186, 1996.
Zhou et al. “Finite element simulation of the film spallation process induced by the pulsed laser peening”, Journal of Applied Physics, vol. 94, No. 5, Sep. 1, 2003, pp. 2968-2975.

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