Laser-gated and pumped multi-layer semiconductor power...

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With light activation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07002188

ABSTRACT:
A laser-activated semiconductor switching device includes a semiconductor assembly including a multi-layer semiconductor structure having a first principal surface, and a laser assembly. The laser assembly includes at least one laser device and is directly connected to said first principal surface. The first principal surface includes a window area from which a metallization layer and an emitter layer of the semiconductor assembly are masked, such that laser light emitted from the laser assembly impinges through the window area directly onto a base layer of said semiconductor assembly to initiate current conduction by said switching device.

REFERENCES:
patent: 6154477 (2000-11-01), Weidenheimer et al.
patent: 6218682 (2001-04-01), Zucker et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Laser-gated and pumped multi-layer semiconductor power... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Laser-gated and pumped multi-layer semiconductor power..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser-gated and pumped multi-layer semiconductor power... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3698856

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.