Laser furnace and method for zone refining of semiconductor wafe

Details Laser furnace and method for zone refining of semiconductor wafe Laser furnace and method for zone refining of semiconductor wafe

1985-11-21

1988-10-25

Albritton, C. L.

Electric heating

Metal heating

By arc

21912184, 2191218, 21912162, 21912161, B23K 2600

Patent

active

047805900

ABSTRACT:
A method of zone refining a crystal wafer (116 FIG. 1) comprising the steps of focusing a laser beam to a small spot (120) of selectable size on the surface of the crystal wafer (116) to melt a spot on the crystal wafer, scanning the small laser beam spot back and forth across the surface of the crystal wafer (116) at a constant velocity, and moving the scanning laser beam across a predetermined zone of the surface of the crystal wafer (116) in a direction normal to the laser beam scanning direction and at a selectible velocity to melt and refine the entire crystal wafer (116).

REFERENCES:
patent: 3778585 (1973-12-01), Mallozzi et al.
patent: 4309225 (1982-01-01), Fan et al.
patent: 4322253 (1982-03-01), Pankove et al.
patent: 4370175 (1983-01-01), Levatter
patent: 4446169 (1984-05-01), Castle et al.
Tan, "Individual Chip Joining Monitor," IBM Technical Disclosure Bulletin, vol. 21, No. 6, p. 2551, Nov. 1978.
Rhodes, "Semiconductor Chip Leveling Apparatus," IBM Technical Disclosure Bulletin, vol. 21, No. 10, pp. 4121-4122, Mar., 1979.

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