Laser etching method and apparatus therefor

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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Details

C438S718000, C438S719000

Reexamination Certificate

active

10943026

ABSTRACT:
The invention provides a laser etching method for optical ablation working by irradiating a work article formed of an inorganic material with a laser light from a laser oscillator capable of emitting in succession light pulses of a large energy density in space and time with a pulse radiation time not exceeding 1 picosecond, wherein, in laser etching of the work article formed of the inorganic material by irradiation thereof with the laser light from the laser oscillator with a predetermined pattern and with a predetermined energy density, there is utilized means for preventing deposition of a work by-product around the etching position.

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