Laser-enhanced drive in of source and drain diffusions

Metal working – Method of mechanical manufacture – Assembling or joining

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29576B, 29576T, 148 15, 148175, 148187, 148DIG91, 357 91, H01L 21263, H01L 21265

Patent

active

046214119

ABSTRACT:
Optical illumination rather than furnace heating is used to drive in MOSFET source and drain diffusions, preferably using a surface layer of antimony as the dopant source. This results in substantially less overlap between the gate and the source and drain diffusions. Similarly, if the present invention is practiced in a process having gate sidewalls less than zero overlap can be achieved.

REFERENCES:
patent: 4226650 (1980-10-01), Takahashi et al.
patent: 4243433 (1981-01-01), Gibbons
patent: 4364778 (1982-12-01), Leamy et al.
patent: 4369072 (1983-01-01), Bakeman, Jr. et al.
patent: 4379727 (1983-04-01), Hansen et al.
patent: 4434013 (1984-02-01), Bol
patent: 4468855 (1984-09-01), Sasaki
patent: 4502205 (1985-03-01), Yahano
Koyanagi et al, Appl. Phys. Letts. 35, (1979), 621.
Yonezawa et al, in Semiconductor Silicon, 1977.
Ed. Huff et al, Electrochem. Soc. Proc. vol. 77-2, Princeton, p. 658.
Fowler et al, IBM-TDB, 24 (1981), 1090.
White et al, in Laser-Solid Interactions . . . , ed. Narayan et al, North-Holland, N.Y., 1982, p. 287.
Joshi et al, IBM-TDB, vol. 13, (1970), 928.
Hess et al, Ibid, p. 337.

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