Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2011-08-16
2011-08-16
Wilson, Allan R (Department: 2815)
Coherent light generators
Particular active media
Semiconductor
C257SE33023, C372S043010
Reexamination Certificate
active
08000366
ABSTRACT:
A semiconductor laser diode with a high indium content is provided with a lattice matched cladding layer or layers. One or both of the cladding layers may comprise bulk aluminum gallium indium nitride in the ratio of AlxGa1-x-yInyN and/or a short period superlattice structures of, for example, a plurality of alternating layer pairs of aluminum gallium indium nitride in the ratio of AlxGa1-x-yInyN and gallium indium nitride in the ratio of GasIn1-sN, providing a multi-quantum barrier (MQB) effect. Lattice matching of the cladding layer(s) and active layer reduce or eliminate strain, and the materials chosen for the cladding layers optimizes optical and carrier confinement. Alternatively, the lattice parameters may be selected to provide strain balanced MQBs, e.g., where the barrier layers are tensile-strained and the well layers compressed.
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Bour David P.
Chua Christopher L.
Johnson Noble M.
Yang Zhihong
Palo Alto Research Center Incorporated
Small Jonathan A.
Wilson Allan R
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