Laser diode with electron and hole confinement and barrier layer

Details Laser diode with electron and hole confinement and barrier layer Laser diode with electron and hole confinement and barrier layer

1994-02-09

1995-12-12

Healy, Brian

Coherent light generators

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Semiconductor

372 46, H01S 318

Patent

active

054757002

ABSTRACT:
A laser diode suitable for blue-green light emission utilizing type II heterojuctions of II-VI compound semiconductors. The laser diode comprises a layer 24 for confining electrons, a layer 26 for confining holes, and a quantum well layer which is formed bewteen the electron confinement layer 24 and the hole confinement layer 26 and allows the confined electrons and holes to recombine therein. The laser also comprises an electron barrier layer 23 and a hole barrier layer 27 for preventing diffusion of the electrons and holes beyond the barriers. The light emitted by the recombination is confined between the n-cladding layer 22 and a p-cladding layer 28.

REFERENCES:
patent: 3927385 (1975-12-01), Pratt, Jr.
patent: 4992837 (1991-02-01), Sakai et al.
patent: 5010376 (1991-04-01), Nishimura et al.
patent: 5045897 (1991-09-01), Ahlgren
patent: 5079601 (1992-01-01), Esaki et al.
patent: 5081632 (1992-01-01), Migita et al.
patent: 5266814 (1993-11-01), Inata et al.
English Language Abstract of Japanese Unexamined Publication No. 60-178682, Kentarou Onabe, Jan. 22, 1986, vol. 10, No. 16, pp. 275-277.
A. N. Baranov et al., "Quantum well laser with a single heterojunction," Soviet Technical Physics Letters, Jun. 1986, New York, vol. 12, No. 6.
M. C. Phillips et al., "Proposal and verification of a new visible light emitter based on wide band gap I-VI semiconductors," Applied Physics Letters, Oct. 19, 1992, New York, N.Y., vol. 61, No. 16, pp. 1962-1964.
Y. Rajakarunanayake et al., "Band alignment of ZnCdTe/ZnTe and ZnTeSe/ZnTe strained layer superlatices," Proceedings of the SPIE; Growth of Semiconductor Structures and High TC Thin Films on Semiconductors, Mar. 20-21, 1990, San Diego, Calif., vol. 1285, pp. 142-150.

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