Laser diode with buried active layer and lateral current limitat

Details Laser diode with buried active layer and lateral current limitat Laser diode with buried active layer and lateral current limitat

1985-09-13

1987-07-21

Wan, Gene

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

046823379

ABSTRACT:
A laser diode has regions laterally flanking a strip-shaped laser junction. In these regions a pn-junction inhibiting the laser current is generated by a re-doping which has been created by dopant diffusion from a given layer through an adjoining, further layer into another layer spaced from the given layer by the further layer.

REFERENCES:
patent: 4426700 (1984-01-01), Hirao et al.

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