Laser diode with an ion-implanted region

Details Laser diode with an ion-implanted region Laser diode with an ion-implanted region

1998-09-04

2000-04-25

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 45, 257 97, F21L 3300

Patent

active

060552581

ABSTRACT:
A semiconductor laser device is disclosed in which the device comprises one or more ion-implanted regions as a means to decrease the occurrence of device failures attributable to dark-line defects. The ion-implanted regions, which are formed between the laser gain cavity and the regions of probable dark-line defect origination, serve to modify the electrical, optical, and mechanical properties of the device lattice structure, thus reducing or eliminating the propagation of dark-line defects emanating from constituent defects or bulk material imperfections which may be present in the device.

REFERENCES:
patent: 4780879 (1988-10-01), Chinone et al.
patent: 5394425 (1995-02-01), Fukunaga et al.
patent: 5764674 (1998-06-01), Hibbs-Brenner et al.
patent: 5804461 (1998-09-01), Beyea et al.

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