Laser diode with an ion-implant region

Details Laser diode with an ion-implant region Laser diode with an ion-implant region

1995-11-22

1998-09-08

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Dopant introduction into semiconductor region

438 46, H01L 3100

Patent

active

058044612

ABSTRACT:
A method of fabricating a semiconductor laser device is disclosed in which the device comprises one or more ion-implanted regions as a means to decrease the occurrence of device failures attributable to dark-line defects. The ion-implanted regions, which are formed between the laser gain cavity and the regions of probable dark-line defect origination, serve to modify the electrical, optical, and mechanical properties of the device lattice structure, thus reducing or eliminating the propagation of dark-line defects emanating from constituent defects or bulk material imperfections which may be present in the device.

REFERENCES:
patent: 3824133 (1974-07-01), D'Asaro

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