Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-09-05
2006-09-05
Menefee, James (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S044010
Reexamination Certificate
active
07103080
ABSTRACT:
A laser diode that has a pluality of semiconductor epitaxial layers grown on a substrate. The diode includes a light generating layer located between two layers of n-type material. A thin layer of p-type material is interposed between the active layer and an n-type layer. The diode includes a layer of n-doped material located adjacent to a substrate. The laser diode further includes an active layer located between the n-doped layer and a layer of p-doped material. An additional layer of n-doped material is located between the p-doped material and a contact. The contact is biased so as to induce a recombination of holes and electrons in the active region and generate light. The light travels along the active layer, p-doped layer and in both n-doped layers. Having an n-doped layer between the contact and p-doped layer reduces the amount of photon absorption within the laser diode.
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Sugg A R et al: “n-p-(p+-n+)-n AlyGa1−yAs-GaAs-InxGa1−xAs quantum-well laser with p+-n+GaAs-InGaAs tunnel contact on n-GaAs”, Applied Physics Letters, American Institute of Physics, NY, vol. 62, No. 20, May 17, 1993, p. 2510-2512.
Irell & Manella LLP
Menefee James
Quintessence Photonics Corp.
Yorks Ben J.
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