Laser diode pumped, erbium-doped, solid state laser with high sl

Coherent light generators – Particular active media – Insulating crystal

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372 71, 372 75, H01S 316

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active

050142798

ABSTRACT:
A laser and method for producing a laser emission at a wavelength of substantially 2.8 microns is disclosed. In a preferred embodiment of the invention, the laser comprises laser diode means for emitting a pump beam at a preselected wavelength; a crystal; and a laser cavity defined by first and second reflective elements at opposing ends of the crystal to form a reflective path therebetween; the crystal having a preselected host material doped with a predetermined percent concentration of erbium activator ions sufficient to produce a laser emission at substantially 2.8 microns when the crystal is pumped by the laser diode means, a portion of the laser emission at substantially 2.8 microns being outputted from one of the first and second reflective elements at a slope efficiency of at least 5 percent, but preferably 10 percent, when the crystal is pumped by the pump beam.

REFERENCES:
patent: 4110702 (1978-08-01), Chicklis
patent: 4321559 (1982-03-01), Esterowitz et al.
patent: 4676583 (1987-06-01), Hicks, Jr.
patent: 4707893 (1989-01-01), Dixon
patent: 4852117 (1989-07-01), Po
patent: 4852567 (1989-08-01), Sinofsky
Kintz et al, Appl. Phys. Lett. vol. 50(22) Jun. 1, 1987 "CW and pulsed 2.8 mu.m Laser emission from Diode-Pumped Er.sup.3+ :LiYF.sub.4. . . ".

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