Laser diode operable in 1.3 μm or 1.5 μm...

Details Laser diode operable in 1.3 μm or 1.5 μm... Laser diode operable in 1.3 μm or 1.5 μm...

2007-02-13

2007-02-13

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

C438S046000

Reexamination Certificate

active

10753568

ABSTRACT:
A laser diode includes an active layer of a group III-V compound semiconductor device containing N and As as the group V elements. The active layer has exposed lateral edges wherein the N atoms are substituted by the As atoms at the exposed lateral edges by an annealing process conducted in a AsH3atmosphere.

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Miyashi, et al. “Growth Parameters for Metastable CaP1x-Nx Alloys in MOVPE” (Inst. Phys. Conf. Ser. No. 141:2, Sep. 1994, pp. 97-100.
English Translation of Japanese Patent JP 07-154023, Jun. 16, 1995.

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