Laser diode, method for making device and method for monitoring

Details Laser diode, method for making device and method for monitoring Laser diode, method for making device and method for monitoring

1990-05-11

1991-01-29

Gonzalez, Frank

Coherent light generators

Particular active media

Semiconductor

372 33, 372 38, H01S 319

Patent

active

049892142

ABSTRACT:
A monolithically integrated structure comprises a laser diode, a photodetector diode and a reference diode which are monolithically integrated on a common substrate. The photodetector diode is optically coupled to the laser diode. The reference diode is substantially identical to the photodetector diode and optically decoupled from the laser diode. When substantially equal reverse biases are applied to the photodetector diode and the reference diode, the reference diode conducts a leakage current which can be used to substantially cancel the leakage current of the photodetector diode. The monolithically integrated structure may also include a modulator diode which is monolithically integrated on the common substrate and optically coupled to the laser diode. The monolithically integrated structure is useful in optical communications systems.

REFERENCES:
patent: 4470143 (1984-09-01), Kitamura et al.
patent: 4558449 (1985-12-01), Gordon
patent: 4675518 (1987-06-01), Oimura et al.
patent: 4713819 (1987-12-01), Yoshikawa
patent: 4773074 (1988-09-01), Hunsperger et al.
patent: 4811350 (1989-03-01), Yamamoto et al.
"Characteristics of 1.3 .mu.m InGaAsP Lasers Used as Photodetectors", Van Der Ziel, Journal of Lightwave Technology, vol. 7, No. 2, Feb. 1989, pp. 347-352.

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