Laser diode having narrowed radiation angle characteristic

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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257 95, 257 96, 257 97, 257 98, 372 45, 372 46, 372 47, 372 48, 372 49, H01L 3300

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active

056939655

ABSTRACT:
An active layer 102 and a clad layer 103 are formed on a semiconductor substrate 101. The active layer including an optical guide layer and an optical confinement layer/formed so that the thickness of the active layer gradually decreases toward a light-emission-side end facet. Since a spot size is gradually expanded toward an emission end, the radiation angle of an emitted beam is narrowed and characteristics including a threshold current become superior.

REFERENCES:
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patent: 5602864 (1997-02-01), Welch et al.
No Author, "High Performance Quantum Well GaAs Distributed Feedback and Reflector Structures", IBM Technical Disclosure Bulletin, vol. 31, No. 12, pp. 172-173, May 1989.
H. Kobayashi et al., "Tapered Thickness MQW Waveguide BH MQW Lasers", IEEE Photonics Technology Letters, vol. 6, No. 9, Sep. 1994, pp. 1080 and 1081.
I. Moerman, et al., "Monolithic integration of a spot size transformer with a planar buried heterostructure in GaAsP/InP-laser using the shadow masked growth technique", Aug. 1994, pp. 888-890, IEEE Photonics Technology Letters, vol. 6, No. 8.
T. Murakami, et al., "A very narrow-beam AlGaAs laser with a thin tapered-thickness active layer (T3 laser)", Jun. 1987, pp. 712-719, IEEE Journal of Quantum Electronics, vol. QE-23, No. 6.

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