Laser diode having an active layer containing N and operable...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor

Reexamination Certificate

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C117S089000

Reexamination Certificate

active

10428074

ABSTRACT:
An optical semiconductor device operable in a 0.6 μm band includes an active layer of GaInNP sandwiched by a pair of GaInP layer with a thickness of about 2 molecular layers or less.

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Ougazzaden et al., “Metal Organic Vapor Phase Epitaxy Growth of GaAsN on GaAs Using Dimethylhydrazine and Tertiarybutylarsine,” Applied Physics Letters, vol. 70, No. 21, May 26, 1997, pp. 2861-2863.
H. Hamada et al., “Room-termperature CW Operation of 610nm Band AlGaInP Strained Multiquantum Well Laser Diodes with Multiquantum Barrier,” Electronics Letters, vol. 28, No. 19, Sep. 1992, pp. 1834-1836.
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M. Kondow et al., “GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance,” Jpn. J. Appl. Phys., vol. 35 (1996), pp. 1273-1275, Part 1, No. 2B, Feb. 1996.
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