Laser diode having an active layer containing N and operable...

Details Laser diode having an active layer containing N and operable... Laser diode having an active layer containing N and operable...

2005-04-26

2005-04-26

Kunemund, Robert (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S102000, C117S104000, C117S105000, C117S955000, C117S956000, C117S953000

Reexamination Certificate

active

06884291

ABSTRACT:
An optical semiconductor device operable in a 0.6 μm band includes an active layer of GaInNP sandwiched by a pair of GaInP layers each having a thickness of about 2 molecular layers or less.

REFERENCES:
patent: 4745612 (1988-05-01), Hayakawa et al.
patent: 5383211 (1995-01-01), Van de Walle et al.
patent: 5585649 (1996-12-01), Ishikawa et al.
patent: 5937274 (1999-08-01), Kondow et al.
patent: 6072196 (2000-06-01), Sato
patent: 6150677 (2000-11-01), Tanaka et al.
patent: 6281518 (2001-08-01), Sato
patent: 10-209571 (1998-08-01), None
patent: 11-307880 (1999-11-01), None
patent: 2000-91710 (2000-03-01), None
Floyd et al. “Hetergeneous integration of visible AlGaInP and . . . ” Electronic Letters vol. 35 No. 24 pp 2120-2121, Nov. 25, 1999.*
Ougazzaden et al., “Metal Organic Vapor Phase Epitaxy Growth of GAsN on GaAs Using Dimethylhydrazine and Tertiarybutylarsine,” Applied Physics Letters, vol. 70, No. 21, May 26, 1997, pp. 2861-2863.
H. Hamada, et al., “Room-temperature CW Operation of 610nm Band AlGaInP Strained Multiquantum Well Laser Diodes With Multiquantum Barrier”.
S. Tiwari et al., “Empirical fit to band discontinuities and barrier heights in III-V alloy systems”, Appl. Phys. Lett. 60 (5) Feb. 3, 1992, p. 630-632.
M. Kondow, et al., “GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance”, Jpn. J. Appl. Phys. vol. 35 (1996), p. 1273-1275, Part 1, No. 2B, Feb. 1996.

Affiliated with

Also associated with

Rating

Laser diode having an active layer containing N and operable... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Laser diode having an active layer containing N and operable..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser diode having an active layer containing N and operable... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3408865