Laser diode having an active layer containing N and operable...

Details Laser diode having an active layer containing N and operable... Laser diode having an active layer containing N and operable...

2008-06-10

2008-06-10

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S090000, C117S094000, C117S095000, C117S096000, C117S104000

Reexamination Certificate

active

07384479

ABSTRACT:
An optical semiconductor device operable in a 0.6 μm band includes an active layer of GaInNP sandwiched by a pair of GaInP layer with a thickness of about 2 molecular layers or less.

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