Laser diode epitaxial wafer and method for producing same

Details Laser diode epitaxial wafer and method for producing same Laser diode epitaxial wafer and method for producing same

2008-03-07

2010-06-01

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S047000, C257SE21539, C257SE21542

Reexamination Certificate

active

07727792

ABSTRACT:
A laser diode epitaxial wafer has an n-type GaAs substrate, an n-type cladding layer formed on the n-type GaAs substrate, an active layer formed on the n-type cladding layer, and a p-type cladding layer formed on the active layer. The n-type cladding layer, the active layer, and the p-type cladding layer are formed of an AlGaInP-based material. The p-type cladding layer has carbon as a p-type impurity. The p-type cladding layer has a carrier concentration in the range of not less than 8.0×1017cm−3and not more than 1.5×1018cm−3.

REFERENCES:
patent: 5010556 (1991-04-01), Imanaka et al.
patent: 5153889 (1992-10-01), Sugawara et al.
patent: 5656538 (1997-08-01), Gardner et al.
patent: 2002-25920 (2002-01-01), None

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