Laser diode epitaxial wafer and method for producing same

Details Laser diode epitaxial wafer and method for producing same Laser diode epitaxial wafer and method for producing same

2011-03-29

2011-03-29

Kebede, Brook (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant material

C257SE33022

Reexamination Certificate

active

07915634

ABSTRACT:
A laser diode epitaxial wafer includes an n-type GaAs substrate, an n-type cladding layer formed on the n-type GaAs substrate, an active layer formed on the n-type cladding layer, and a p-type cladding layer formed on the active layer. The n-type cladding layer, the active layer, and the p-type cladding layer include an AlGaInP-based material. The p-type cladding layer has carbon as a p-type impurity. The p-type cladding layer has a carrier concentration between 8.0×1017cm−3and 1.5×1018cm−3.

REFERENCES:
patent: 5153889 (1992-10-01), Sugawara et al.
patent: 5656538 (1997-08-01), Gardner et al.
patent: 6787383 (2004-09-01), Ikeda et al.
patent: 2005/0058169 (2005-03-01), Onishi
patent: 2002-25920 (2002-01-01), None

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