Laser diode array and fabrication method thereof

Details Laser diode array and fabrication method thereof Laser diode array and fabrication method thereof

1997-10-08

1999-09-14

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 96, 372 23, 438 35, H01S 319, H01S 308, H01L 2120

Patent

active

059533595

ABSTRACT:
First to n-th single-axial-mode LDs are arranged on a semiconductor substrate, where n.gtoreq.2. Each of the first to n-th LDs has a stripe-shaped semiconductor active layer formed on or over the substrate, a stripe-shaped semiconductor guiding layer formed on one side of the active layer, and a stripe-shaped semiconductor cladding layer formed on the other side of the active layer. The guiding layers of the first to n-th LDs have first to n-th diffraction gratings, respectively. The (k+1)-th period is equal to a sum of the k-th period and an increment, where 1.ltoreq.k S (n-1). The active layers of the first to n-th LDs have first to n-th gain peak wavelengths, respectively. The (k+1)-th gain peak wavelength is equal to a sum of the k-th gain peak wavelength and an increment. The first to n-th LDs have first to n-th oscillation wavelengths with first to n-th wavelength differences from the first to n-th gain peak wavelengths, respectively. The first to n-th wavelength differences are within a specific acceptable range for low threshold currents and low wavelength chirping. The lasing characteristic fluctuation is limited within the acceptable range independent of an oscillation wavelength span of the LDs.

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