Laser diode and process for producing the same

Details Laser diode and process for producing the same Laser diode and process for producing the same

1994-03-14

1997-03-04

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

056087519

ABSTRACT:
The disclosure describes a laser diode comprising a Group III-V compound single-crystal substrate of first conduction type; a first cladding layer of first conduction type composed of (Al.sub.m Ga.sub.1-m).sub.n In.sub.1-n P (0.3.ltoreq.m.ltoreq.1 and 0.3.ltoreq.n.ltoreq.0.75) and formed on said single-crystal substrate; an active layer composed of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0.ltoreq.x.ltoreq.0.5 and 0.3.ltoreq.y.ltoreq.0.75) and formed on said first cladding layer; a second cladding layer of second conduction type composed of (Al.sub.m Ga.sub.1-m).sub.n In.sub.1-n P (0.3.ltoreq.m.ltoreq.1 and 0.3.ltoreq.n.ltoreq.0.75) and formed on said active layer and having a ridge; and a current blocking layer composed of Al.sub.u Ga.sub.1-u As.sub.v P.sub.1-v, (0.ltoreq.u.ltoreq.1 and 0.ltoreq.v.ltoreq.1) and so formed as to contact the lateral side of the ridge of said second cladding layer,
(1) each refractive index of the first and second cladding layers being smaller than that of the active layer and (2) the refractive index of the current blocking layer being smaller than that of the second cladding layer.

REFERENCES:
patent: 5065404 (1991-11-01), Okajima et al.
patent: 5153889 (1992-10-01), Sugawara et al.
Tanaka, H. et al, "Refractive indices . . . matched to GaAs", J. Appl. Phys. 59(3), 1 Feb. 1986, pp. 985-986.
Adachi, Sadao, "GaAs, AlAs and A1.sub.x Ga.sub.1-x As: Material parameters for use in research and device applications", J. App. Phys 58(3), 1 Aug. 1985, pp. R1-R29.
K. Shimoyama, et al., Novel selective area growth of AlGaAs and AlAs with HCl gas by MOVPE, pp. 235-242; Journal of Crystal Growth 124 (1992) North-Holland, (no month).

Affiliated with

Also associated with

Rating

Laser diode and process for producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Laser diode and process for producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser diode and process for producing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2152840