Laser diode and optical communications system using such laser d

Coherent light generators – Particular active media – Semiconductor

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372 45, 359341, H01S 319, H01S 300

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active

058056270

ABSTRACT:
Embedded layers having a high resistance or an inverse conductivity with respect to a ridge structure are formed on either side of a ridge structure which is formed to correspond to an light emission region of a laser diode. The embedded layers confines a current in the ridge structure and moderates light-confinement performance in the ridge structure at an emitting end of the laser diode.

REFERENCES:
patent: 4653059 (1987-03-01), Akiba et al.
patent: 4833684 (1989-05-01), Krekels et al.
patent: 5377294 (1994-12-01), Onishi et al.
H.C. Casey, Jr. et al., Heterostructure Lasers (Part A: Fundamental Principles), p. 43, 1978.
H.C. Casey, Jr. et al., Heterostructure Lasers(Part B: Materials and Operating Characteristics), pp. 12 and 25, 1978.

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