Coherent light generators – Particular active media – Semiconductor
Patent
1995-10-23
1998-09-08
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
372 45, 359341, H01S 319, H01S 300
Patent
active
058056270
ABSTRACT:
Embedded layers having a high resistance or an inverse conductivity with respect to a ridge structure are formed on either side of a ridge structure which is formed to correspond to an light emission region of a laser diode. The embedded layers confines a current in the ridge structure and moderates light-confinement performance in the ridge structure at an emitting end of the laser diode.
REFERENCES:
patent: 4653059 (1987-03-01), Akiba et al.
patent: 4833684 (1989-05-01), Krekels et al.
patent: 5377294 (1994-12-01), Onishi et al.
H.C. Casey, Jr. et al., Heterostructure Lasers (Part A: Fundamental Principles), p. 43, 1978.
H.C. Casey, Jr. et al., Heterostructure Lasers(Part B: Materials and Operating Characteristics), pp. 12 and 25, 1978.
Kubota Shin'ichi
Soda Haruhisa
Bovernick Rodney B.
Fujitsu Limited
Phan Luong-Quyen T.
LandOfFree
Laser diode and optical communications system using such laser d does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Laser diode and optical communications system using such laser d, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser diode and optical communications system using such laser d will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1291035