Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Patent
1996-10-15
1998-11-10
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
438 39, 438 38, H01L 21203
Patent
active
058343296
ABSTRACT:
A ridge wavegide laser diode, with an inverse mesa structure, resistant to heat and improved in the adhesion of a contact metal to a contact layer, which can be obtained by forming a polyimide spacer in such a way that polyimide remains only at the lower part of the corner of the inverse mesa structure. In the diode, the contact metal is minimally broken off at the opposite sides of the mesa structure.
REFERENCES:
patent: 5001080 (1991-03-01), Wada et al.
patent: 5242839 (1993-09-01), Oh et al.
patent: 5307357 (1994-04-01), Jost et al.
patent: 5658824 (1997-08-01), Itoh et al.
Kim Ang Seo
Kim Don Soo
Lee Sang Yong
Sin Young Kun
Bowers Jr. Charles L.
Christianson Keith
Hyundai Electronics Industries Co,. Ltd.
Nath Gary M.
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