Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-01-24
2006-01-24
Flynn, Nathan J. (Department: 2826)
Coherent light generators
Particular active media
Semiconductor
C372S043010, C372S044010
Reexamination Certificate
active
06990133
ABSTRACT:
Laser diodes containing aluminum at high concentration in an active layer have been usually suffered from remarkable facet deterioration along with laser driving operation and it has been difficult for the laser diodes to attain high reliability. An aluminum oxide film lacking in oxygen is formed adjacent to the semiconductor on an optical resonator facet, by which facet deterioration can be minimized and, accordingly, the laser diode can be operated with no facet deterioration at high temperature for long time and a laser diode of high reliability can be manufactured at a reduced cost.
REFERENCES:
patent: 5063173 (1991-11-01), Gasser et al.
patent: 6795480 (2004-09-01), Kaya et al.
patent: 2002-223026 (2001-01-01), None
patent: 2003-86884 (2001-09-01), None
Tonao Yuasa et al., “Facet Protection of (AlGa) As Lasers Using SiO2Sputter Deposition”, Appl. Phys. Lett, vol. 34, No. 10, (May 15, 1979), pp. 685-687.
Kikawa Takeshi
Nakahara Kouji
Nomoto Etsuko
Flynn Nathan J.
Hitachi , Ltd.
Mondt Johannes
Opnext Japan, Inc.
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