Laser diode

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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Details

C372S043010, C372S046010, C372S050100, C372S050124, C257S436000, C257SE25032, C257SE33076, C257SE33077

Reexamination Certificate

active

07873092

ABSTRACT:
The present invention provides a laser diode realizing improved light detection precision. The laser diode includes a stack structure in which a first semiconductor layer of a first conduction type, an active layer, and a second semiconductor layer of a second conduction type are included in this order; a photodetection layer; and a plurality of light absorption layers provided on the corresponding position of antinodes or nodes of standing waves of light output from the active layer.

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Japanese Office Action dated Jun. 30, 2008 for corresponding Japanese Application No. 2006-311691.
Japanese Office Action issued Jun. 2, 2009 for corresponding Japanese Application No. 2006-311691.

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