Laser diode

Details Laser diode Laser diode

1987-01-30

1988-12-20

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, H01S 319

Patent

active

047929596

ABSTRACT:
A laser diode is provided having a strip-shaped web based on the principle of a metal clad ridge waveguide laser diode with a strip-shaped web width of less than 10 .mu.m. At least one lateral web extends laterally of the strip-shaped web and serves as a carrier for an electrical connection between the metal cladding of the strip-shaped web and a contacting surface for an electrical lead.

REFERENCES:
patent: 4352187 (1982-09-01), Amann
patent: 4692927 (1987-09-01), Sawai et al.
P. C. Chen et al., "A New GaInAsP/InP T-Laser at 1.2 .mu.m Fabricated on Semi-Insulating Substrate", Japanese Journal of Applied Physics, vol. 19, No. 12, (1980), pp. L775-L776.
S. Tarucha et al., "Monolithic Integration of a Laser Diode and an Optical Waveguide Modulator Having a GaAs/AlGaAs Quantum Well Double Heterostructure", Appl. Phys. Lett., 48(1), Jan. 6, 1986, pp. 1-3.
Z. L. Lian, et al., "Low Threshold GaInAsP/InP Buried-Heterostructure Lasers with a Chemically Etched and Mass-Transported Minor", vol. 44, No. 10, Appl. Phys. Lett., pp. 945-947, (May 15, 1984).
M. C. Amann, "New Contacting System for Low-Expense GaAs-AlGaAs Light Sources," vol. 34, No. 12, Frequenz, pp. 343-346, (1980).
T. H. Windhorn, et al., "Room-Temperature Operation of GaAs/AlGaAs Diode Lasers Fabricated on a Monolithic GaAs/Si Substrate", vol. 47, No. 10, Apply. Phys. Lett., pp. 1031-1033, (Nov. 15, 1985).

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