Coherent light generators – Particular active media – Semiconductor
Patent
1986-03-06
1987-10-20
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 46, 372 48, 357 17, 357 16, H01S 319
Patent
active
047019263
ABSTRACT:
A laser diode in accordance with the present invention comprises: a substrate (11) of p-GaAs; a current constricting layer (12) of n-GaAs formed with a slit (13) over the substrate, wherein the slit is opened through the constricting layer and separates the constricting layer into two areas; a liner(s) (21) of p-GaAs formed on at least both the inner side walls of the slit; a lower clad layer (14) of p-Ga.sub.0.6 Al.sub.0.4 As formed over the constricting layer, burying the slit; an active layer (15) of p-Ga.sub.0.9 Al.sub.0.1 As which is formed over the lower clad layer and has a refractive index higher than that of the lower clad layer; and an upper clad layer of n-Ga.sub.0.6 Al.sub.0.4 As which is formed over the active layer and has a refractive index lower than that of the active layer.
REFERENCES:
patent: 4326176 (1982-04-01), Aiki et al.
"Channeled-Substrate Planar Structure (AlGa) as Injection Lasers"; K. Aiki et al, Applied Physics Letter, vol. 30, No. 12, Jun. 15, 1977, pp. 649-651.
Castrucci et al., "Bipolar/FET High Performance Circuit", IBM Technical Disclosure Bulletin, vol. 16, No. 8, Jan. 1974, pp. 2719-2720.
Nakazato et al., "SICOS-A High Performance Bipolar Structure for VLSI", VLSI Symposium, 1982, pp. 118-119.
Tang et al., "A Symmetrical Bipolar Structure", (IBM) (IE DM), 1980, pp. 58-60.
Seiwa Yoshito
Takamiya Saburo
Davie James W.
Epps Georgia Y.
Mitsubishi Denki & Kabushiki Kaisha
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