Laser diode

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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Details

C372S043010, C372S046010

Reexamination Certificate

active

07830938

ABSTRACT:
The present invention provides a laser diode having both a small vertical far-field beam divergence and a large vertical optical confinement factor, as well as a method of fabricating the laser diode. The laser diode comprises a layer stack of semiconductor material, which includes a mode-splitting layer having a low refractive index inserted between waveguide layers. In addition to increasing the vertical near-field beam width of the laser diode, the mode-splitting layer also produces a shoulder in an optical mode generated in an active layer of the layer stack, increasing vertical overlap of the optical mode with the active layer.

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