Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2008-12-15
2010-11-09
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S043010, C372S046010
Reexamination Certificate
active
07830938
ABSTRACT:
The present invention provides a laser diode having both a small vertical far-field beam divergence and a large vertical optical confinement factor, as well as a method of fabricating the laser diode. The laser diode comprises a layer stack of semiconductor material, which includes a mode-splitting layer having a low refractive index inserted between waveguide layers. In addition to increasing the vertical near-field beam width of the laser diode, the mode-splitting layer also produces a shoulder in an optical mode generated in an active layer of the layer stack, increasing vertical overlap of the optical mode with the active layer.
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Harvey Minsun
JDS Uniphase Corporation
Niu Xnning
Pequignot Matthew A.
Pequignot & Myers LLC
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