Laser diode

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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Details

C372S043010, C372S044010, C372S045013, C372S049010, C372S049010

Reexamination Certificate

active

06940883

ABSTRACT:
A laser diode (1) for outputting light of a single mode comprises a substrate layer (5), a cladding layer (6) and a compound light propagating layer (7) comprising first, second, third and fourth layers (9to12). A wave guiding region (15) of refractive index lower than its adjacent regions is defined by the third layer (11) by two quantum wells (16) positioned at the anti-node of light of a single mode which is propagating in the third layer (11) for propagating and amplifying the single mode light. A central ridge (17) locates the wave guiding region transversely of the direction of light propagation. The wave guiding region (15) can also be defined by shaping the top cladding layer (6) by forming an elongated central channel through the central ridge (17).

REFERENCES:
patent: 4393504 (1983-07-01), Botez
patent: 5438585 (1995-08-01), Armour et al.
patent: 5574818 (1996-11-01), Krivoshlykov
F.P. Logue, et al.; “Transverse Waveguide Design For High-Brightness Laser Diodes”; Physics And Simulation Of Optoelectronic Devices VIII, San Jose, CA, USA Jan. 24-28, 2000, vopl., 2944, pt. 1-2, pp. 387-394, XP001020838, Proceedings Of The SPIE.
J.A. Patchell et al., “Demonstration fo High-Brightness-Mode Propagation in a Compund Wavequide Structure” Applied Physics Letters, American Institute of Physics. New York, US, vol . . . 15, No. 2, Jul. 12, 1999, pp. 169-171, XP000850756, ISSN: 0003-6951.
F.P. Logue, et al.: “Transverse Waveguide design for high-brightness laser diodes” Physics and Simulation of Optoelectronic Devices VIII, San Jose, CA, USA, Jan. 24-28, 2000, vopl., 3944, pt. 1-2, pp. 387-394, XP001020838, Proceedings of the SPIE.

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