Laser devices including separate confinement heterostructure

Details Laser devices including separate confinement heterostructure Laser devices including separate confinement heterostructure

1997-12-16

2000-07-04

Healy, Brian

Coherent light generators

Particular active media

Semiconductor

372 43, 372 46, 372 50, H01S 319

Patent

active

060848987

ABSTRACT:
A separate confinement heterostructure (SCH) laser device (LD) has: a quantum well active region within an optical guiding region; and, n-type and p-type cladding regions provided on opposite sides of the optical guiding region. An electron-capture layer is provided in the n-side portion of the optical guiding region. The composition of the electron-capture layer is set in such a manner that the minimum energy for X-electrons in the conduction band is lower than that in the surrounding parts of the active region and/or the n-side portion of the optical guiding region. The electron-capture layer is thick enough to bind X-electrons so that, in use, the electron-capture layer promotes the capture of the X-electrons. The electron-capture layer is disposed sufficiently close to the active region to permit transfer ot the captured X-electrons to at least one .GAMMA.-confined level in the active region.

REFERENCES:
patent: 5400355 (1995-03-01), Ishida
patent: 5448585 (1995-09-01), Belenky et al.
patent: 5483547 (1996-01-01), Adams et al.
patent: 5509024 (1996-04-01), Bour et al.
patent: 5588015 (1996-12-01), Yang
patent: 5604762 (1997-02-01), Morinaga et al.
patent: 5692002 (1997-11-01), Mizutani
patent: 5751754 (1998-05-01), Takagi
patent: 5812575 (1998-09-01), Choi
patent: 5848085 (1998-12-01), Nitta
Search Report for Application No. 97310362.5-2214-; Dated Apr. 20, 1998, (EPO).
Search Report for Application No. GB 9626657.2; Dated Mar. 12, 1997.
D.P. Bour et al.; IEEE Journal of Quantum Electronics, vol. 30, No. 2, pp. 593-606, 1994, "Strained Ga.sub.x In.sub.I-x P/(AIG.sub.a).sub.0.5 In.sub.0.5 P Heterostructures and Quantum-Well Laser Diodes".
P. Bhattacharya et al., IEEE Journal of Quantum Electronics, vol., 32, No. 9, pp. 1620-1629, "Tunneling Injection Lasers: A New Class of Lasers With Reduced Hot Carrier Effects".
R. Kumar et al., Appl. Phys. Lett., vol. 67, No. 26, pp. 3704-3706, 1996, "A Quantum Structure For High-Temperature Operation Of AIGaAs Lasers: Multiple-Quantum Barrier And Multiple-Quantum Well In Active Region".
P. M. Smowton et al., Appl. Phys. Lett., vol., 67, No. 28, pp. 1265-1267, 1995, "Threshold Current Temperature Dependence Of GaInP/AlyGa.sub.l-y)InP 670 nm Quantum Well Lasers".

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