Laser device having a plurality of emission zones

Details Laser device having a plurality of emission zones Laser device having a plurality of emission zones

2007-09-18

2007-09-18

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257SE33075, C372S050100

Reexamination Certificate

active

10926903

ABSTRACT:
A laser device having a semiconductor body (1), which has a plurality of active layers (5, 9) arranged vertically one above the other and serving for generating laser radiation. The active layers are subdivided in the transverse direction into a plurality of emission zones (15) and are electrically connected in series in the vertical direction. The semiconductor body (1) is formed in monolithic integrated fashion, and a cooling element (2) is provided on which the semiconductor body (1) is arranged.

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OEL paper, www.eng.warwick.ac.uk/espbc/courses/undergrad/lec5/diode-example.htm. Nov. 26, 2002.
J.P. van der Ziel et al., “Integrated multilayer GaAs lasers separated by tunnel junctions”, Applied Phys. Letters, vol. 41, No. 6, pp. 499-501, 1982.

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