Laser device

Details Laser device Laser device

2011-01-04

2011-01-04

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C977S951000

Reexamination Certificate

active

07864828

ABSTRACT:
A cascade laser device, including a multilayer film structure with a multiple quantum well including a potential barrier and a quantum well; and an electric field applying portion for applying an electric field to the multilayer film structure. The multilayer film structure includes at least two first regions and a second region. The second region is sandwiched between the two first regions; each of the first regions includes multiple sub-bands. When the electric field is applied, carriers are transported from a sub-band in the higher energy quantum well to a sub-band in the lower energy quantum well via the potential barrier in the first regions by tunneling permitted by interaction with light. The second region is thinner than twice a skin depth of the light and includes at least a film having an energy band. The carriers are subjected to energy relaxation in the energy band.

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patent: 2000-101201 (2000-04-01), None
patent: 2006-032691 (2006-02-01), None
R. Köhler, et al., “Terahertz semiconductor-heterostructure laser,” Nature, vol. 417, pp. 156-159, May 2002.

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