Laser crystallized cladding layers for improved amorphous silico

Details Laser crystallized cladding layers for improved amorphous silico Laser crystallized cladding layers for improved amorphous silico

1990-12-27

1992-11-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 2, 437 5, 437904, 136258, H01L 3118

Patent

active

051622394

ABSTRACT:
Scanning laser crystallization of p- and n-type hydrogenated amorphous silicon alloy cladding layers enhances the doping efficiency of such layers without changing the luminescence or other important properties of the middle i-layer in a p-i-n device. The dc dark conductivity of the doped layers increases by a factor of about 100 to about 10,000 above a sharp laser energy density threshold whose magnitude increases with decreasing impurity concentration. In one method, a doped amorphous silicon alloy layer is deposited on an amorphous glass substrate, scanned with laser irradiation, and then an intermediate i-layer is formed over this layer. Another doped amorphous silicon alloy layer is deposited on this layer, doped oppositely from the first doped layer. The second doped layer is then crystallized by scanning laser irradiation, leaving the underlying i-layer virtually unchanged in optical and electronic properties.

REFERENCES:
patent: 4525375 (1985-06-01), Hanak
patent: 4528082 (1985-07-01), Moustakas et al.
patent: 4609407 (1986-09-01), Masao et al.
patent: 4624862 (1986-11-01), Yang et al.
patent: 4718947 (1988-01-01), Arya
patent: 4845043 (1989-07-01), Catalano
patent: 4891330 (1990-01-01), Guha et al.
patent: 4910153 (1990-03-01), Dickson
patent: 5055416 (1991-10-01), Weber
Winer et al., "Excimer-Laser-Induced Crystallization of Hydrogenated Amorphous Silicon", Appl. Phys. Lett., 57, No. 21; Nov. 19, 1990; pp. 2222-2224.
Winer et al., "Fast-Pulse Excimer-Laser-Induced Processes in a-Si:H", presented at the Materials Research Society Symposium proceedings, Nov. 27, 1989.
Fang, P. H., "Excimer-Laser-Induced Silicon Amorphous-Microcrystalline Transformation and its Solar Cell Applications", Solar Cells, vol. 25, pp. 27-29 (1988).
Hamakawa et al., "Optoelectronics and Photovoltaic Applications of Microcrystalline SiC", presented at the Materials Research Society Symposium proceedings, Nov. 27, 1989.
Street, "Luminescence in a-Si:H", Semiconductors and Semimetals, vol. 21, Part B, pp. 197-244 (1984).
Sclater, "Gallium Arsenide IC Technology", TAB Professional and Reference Books, Blue Ridge Summit, Pa., Chapters 1 and 2 (1988).
Winer et al., "Universal Dopant and Defect Equilibrium Kinetics in n-type a-Si:H", Physical Review B, vol. 40, No. 18, Dec. 15, 1989, pp. 12558-12561.
Kruangam et al., "Amorphous-Silicon-Carbide Thin Film Light-Emitting Diode", Optoelectronics-Devices and Technologies, vol. 1, No. 1, pp. 67-84, Jun., 1986.
Siebert et al., "Photoluminescence in a-Si.sub.1-x C.sub.x :H Films", Phys. Stat. Sol., (b) 140, 311 (1987).

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