Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-05-25
2009-11-17
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S064000, C438S149000, C438S150000, C438S486000
Reexamination Certificate
active
07619251
ABSTRACT:
A method of irradiating at least a part of a semiconductor film on the substrate with a CW or pseudo-CW laser beam so as to grow crystals laterally. A region over the semiconductor film having Si as a chief component is provided with a pixel region, a gate line driving circuit region and a signal line driving circuit region for driving pixels, and a terminal region where connection terminals will be formed. The region not irradiated with the CW laser beam is provided in a peripheral portion of each semiconductor device corresponding to the position where the glass substrate will be cut. Due to this means, it is possible to suppress occurrence of a failure caused by propagation of cracks when the substrate is cut.
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Michael Quirk, Julian Serda, Semiconductor Device Manufacturing Technology, Prentice Hall, 2001, pp. 98-99.
Kamo Takahiro
Noda Takeshi
Sato Takeshi
A. Marquez, Esq. Juan Carlos
Hitachi Displays Ltd.
Khosraviani Arman
Loke Steven
Stites & Harbison PLLC
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