Laser crystallization apparatus and crystallization method

Details Laser crystallization apparatus and crystallization method Laser crystallization apparatus and crystallization method

2006-12-06

2010-12-07

Menz, Laura M (Department: 2813)

Electric heating

Metal heating

By arc

C219S121630, C219S121620

Reexamination Certificate

active

07847214

ABSTRACT:
A laser crystallization apparatus and a crystallization method with a high throughput are provided. Laser light having a predetermined light intensity distribution is irradiated to a semiconductor film to melt and crystallize, wherein a irradiation position is placed very quickly and with a high positional accuracy, thereby forming the semiconductor film having a large crystal grain size. A laser crystallization apparatus according to one aspect of the present invention comprises a crystallizing laser light source, a phase shifter modulating pulse laser light to have the predetermined light intensity distribution, an excimer imaging optical system, a substrate holding stage mounting a processing substrate and continuously moving in the predetermined direction, a position measuring means, and a signal generating means indicating generation of the pulse laser light based on the position measurement of the stage by the position measuring means.

REFERENCES:
patent: 6346687 (2002-02-01), Kinoshita et al.
patent: 6797550 (2004-09-01), Kokubo et al.
patent: 6835426 (2004-12-01), Duignan et al.
patent: 7172841 (2007-02-01), Taniguchi et al.
patent: 7232982 (2007-06-01), Takami
patent: 7410848 (2008-08-01), Jyumonji et al.
patent: 7427764 (2008-09-01), Takami
patent: 7642482 (2010-01-01), Takami et al.
patent: 2003/0128350 (2003-07-01), Tanaka
patent: 2003/0216012 (2003-11-01), Sasaki et al.
patent: 2004/0097103 (2004-05-01), Imai et al.
patent: 2004/0266080 (2004-12-01), Jyumonji et al.
patent: 2005/0040146 (2005-02-01), Takami
patent: 2006/0019503 (2006-01-01), Takami
patent: 2006/0186412 (2006-08-01), Jyumonji et al.
patent: 2007/0138146 (2007-06-01), Takami et al.
patent: 2008/0073573 (2008-03-01), Takami et al.
patent: 2008/0289573 (2008-11-01), Jyumonji et al.
patent: 2009/0004763 (2009-01-01), Ono et al.
patent: 2009/0017642 (2009-01-01), Takami
patent: 2003-197521 (2003-07-01), None
patent: 2003-218058 (2003-07-01), None
patent: 2005-64079 (2005-03-01), None
patent: WO 01/71791 (2001-09-01), None
“Automation Solutions for Laser Processing, Medical Device Manufacturing, and Life Sciences”, 2003, Aerotech, p. 9.
“ABL1000 Series”, archived Apr. 2004, Aerotech [retrieved on Jan. 27, 2010]. Retrived from: Internet Archive (wayback machine) <url: http://web.archive.org/web/20040407100757/www.aerotech.com/products/pdf/abl1000.pdf>.
Kohki Inoue, et al., “Amplitude and Phase Modulated Excimer-Laser Melt-Regrowth Method of Silicon Thin-Films—A New Growth Method of 2-D Position-Controlled Large-Grains-”, Thesis Journal of Institute of Electronics, Information and Communication Engineers, Aug. 2002, vol. J85-C, No. 8, pp. 624-629.

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