Laser controlled optical switching in semiconductors

Details Laser controlled optical switching in semiconductors Laser controlled optical switching in semiconductors

1977-11-11

1980-02-26

Sikes, William L.

Oscillators

Molecular or particle resonant type

350354, H01S 3101

Patent

active

041908112

ABSTRACT:
A method and apparatus for switching an infrared radiation signal laser beam in which a semiconductor, capable of transmitting the signal beam without damage, is provided and upon which the signal beam is incident at an angle which may preferably be Brewster's angle. The surface of the semiconductor is irradiated by a second laser beam which has a sufficiently high frequency to produce free carriers in the semiconductor and which has a sufficient radiation intensity and time duration to produce a free carrier density greater than the critical density for the signal beam resulting in substantially total reflection of the signal beam from the semiconductor surface. In particular, a pulsed CO.sub.2 laser beam which is incident on a polycrystalline n-type germanium semiconductor is reflected by irradiating the semiconductor with a pulsed ruby or Nd:glass laser beam.

REFERENCES:
patent: 3555455 (1971-01-01), Paine
patent: 4003631 (1977-01-01), Biet et al.
Sooy et al., Switching of Semiconductor Reflectivity by a Giant Pulse Laser Appl. Phys. Lett., vol. 5, No. 3, (Aug. 1, 1964), pp. 54-56.

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