Coherent light generators – Particular active media – Semiconductor
Patent
1987-05-14
1989-08-22
Sikes, William L.
Coherent light generators
Particular active media
Semiconductor
372 11, 372 18, 372 46, H01S 319
Patent
active
048602965
ABSTRACT:
The invention is a controlled laser having an optical resonator, a laser gain medium placed inside the optical resonator, the laser gain medium being capable of emitting light and of lasing with the light, a multiple layer heterostructure placed inside the optical resonator, and means for varying an optical absorption of the multiple layer heterostructure for the light in order to control an optical gain of the optical resonator, and thereby control lasing of the laser gain medium. Passive mode locking is achieved by the light emitted by the gain medium controlling the optical absorption of the multiple layer heterostructure. Active mode locking and modulation are achieved by controlling the optical absorption of the multiple layer heterostructure by applying an electric field to the multiple layer heterostructure. Control of laser gain by an external light source is achieved by controlling the optical absorption of the multiple layer heterostructure by illuminating it with light from the external light source. An embodiment of the multiple layer heterostructure fabricated as a GaAs-AlGaAs multiple quantum well with a Type I superlattice band structure is a passive mode locker for a semiconductor diode laser.
REFERENCES:
patent: 3492599 (1970-01-01), Rigrod
patent: 3696310 (1972-10-01), Paoli et al.
patent: 3983509 (1976-09-01), Scifres et al.
patent: 4318752 (1982-03-01), Tien
patent: 4350960 (1982-09-01), Matthews et al.
patent: 4408330 (1983-10-01), An
patent: 4425650 (1984-01-01), Mito et al.
patent: 4432092 (1984-02-01), Teramoto et al.
C. Harder et al., "Passive Mode Locking of Buried Heterostructure Lasers With Nonuniform Current Injection", Applied Physics Letters, vol. 42, No. 9, May 1, 1983, pp. 772-774.
Van der Ziel et al., "Subpicosecond Pulses From Passively Mode Locked Ga-As Buried Optical Guide Semiconductor Lasers", Applied Physics Letters, vol. 39, No. 7, Oct. 1981, pp. 525-527.
E. P. Ippen et al., "Picosecond Pulse Generation with Diode Lasers", Picosecond Phenomena II, 1980, pp. 21-25, Springer-Verlag Berlin Heidelberg, N.Y.
H. A. Haus, "Mode-Locked Semiconductor Diode Lasers", Phil. Trans. R. Soc. Lond. A 298, 1980, pp. 257-266.
Chemla Daniel S.
Miller David A. B.
Smith Peter W.
American Telephone and Telegraph Company AT&T Bell Laboratories
Nilsen Walter G.
Schneider Bruce S.
Sikes William L.
Wise Robert E.
LandOfFree
Laser controlled by a multiple-layer heterostructure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Laser controlled by a multiple-layer heterostructure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser controlled by a multiple-layer heterostructure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2420824