Laser beam processing method for making a semiconductor device

Details Laser beam processing method for making a semiconductor device Laser beam processing method for making a semiconductor device

2008-01-03

2010-11-09

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

By electromagnetic irradiation

C257SE21347, C257SE21596, C438S462000

Reexamination Certificate

active

07829439

ABSTRACT:
In a laser beam processing apparatus that processes a semiconductor wafer having a multi-layered wiring structure formed thereon, scribe lines defined thereon, and at least one alignment mark formed on any one of the scribe lines, a laser beam generator system generates a laser beam, and a movement system relatively moves the semiconductor wafer with respect to the laser beam such that the semiconductor wafer is irradiated with a laser beam along the scribe lines to partially remove the multi-layered wiring structure from the semiconductor wafer along the scribe lines. An irradiation control system controls the irradiation of the semiconductor wafer with the laser beam along the scribe lines such that the alignment mark is left on the scribe line.

REFERENCES:
patent: 5266511 (1993-11-01), Takao
patent: 7265033 (2007-09-01), Shigematsu et al.
patent: 01-304721 (1989-12-01), None
patent: 2002-176140 (2002-06-01), None
patent: 2002-329686 (2002-11-01), None
patent: 2003-320466 (2003-11-01), None
patent: 2004-221286 (2004-08-01), None
Japanese Patent Office issued a Japanese Office Action dated Dec. 22, 2009, Application No. 2004-255131.

Affiliated with

Also associated with

Rating

Laser beam processing method for making a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Laser beam processing method for making a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser beam processing method for making a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4234180