Laser beam processing method for a semiconductor wafer

Details Laser beam processing method for a semiconductor wafer Laser beam processing method for a semiconductor wafer

2007-09-04

2007-09-04

Evans, Geoffrey S. (Department: 1725)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

By electromagnetic irradiation

C219S121690, C219S121830

Reexamination Certificate

active

10876519

ABSTRACT:
A laser beam processing method for a semiconductor wafer having a low-dielectric insulating film formed on the front surface of a semiconductor substrate thereof, a plurality of circuits sectioned by streets into a lattice pattern, and metal patterns for testing formed partially on each street. The method includes a laser beam processing step for applying a laser beam to the positions of areas at which the metal patterns are located, and to the low-dielectric insulating film, under different processing conditions so as to remove the metal patterns and the low-dielectric insulating film without damaging the substrate and its circuits.

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