Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
Reexamination Certificate
2006-09-28
2009-06-30
Rosasco, Stephen (Department: 1795)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
Reexamination Certificate
active
07553366
ABSTRACT:
A laser beam pattern mask includes at least one or more transmitting parts, each transmitting part having a central portion and a pair of edge portions provided to both sides of the central portion, each having a substantially triangular shape defined by a virtual boundary line between the central portion and the corresponding edge portion, an upper outside extending from an upper end of the boundary line at an acute angle, and a lower outside extending from a lower end of the boundary line at the acute angle to meet the upper outside at a rounded corner.
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Sposilli et al., “Single-Crystal Si Films Via A Low-Substrate-Temperature Excimer-Laser Crystallization Method”, British Library-“The world's knowledge” www.bl.uk., pp. 953-958.
LG Display Co. Ltd.
McKenna Long & Aldridge LLP
Rosasco Stephen
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