Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2007-02-09
2010-06-15
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
With measuring or testing
C438S487000, C438S795000, C257SE21530
Reexamination Certificate
active
07736917
ABSTRACT:
A laser beam irradiation method that achieves uniform crystallization, even if a film thickness of an a-Si film or the like fluctuates, is provided. The present invention provides a laser beam irradiation method in which a non-single crystal semiconductor film is formed on a substrate having an insulating surface and a laser beam having a wavelength longer than 350 nm is irradiated to the non-single crystal semiconductor film, thus crystallizing the non-single crystal silicon film. The non-single crystal semiconductor film has a film thickness distribution within the surface of the substrate, and a differential coefficient of a laser beam absorptivity with respect to the film thickness of the non-single crystal semiconductor film is positive.
REFERENCES:
patent: 5529951 (1996-06-01), Noguchi et al.
patent: 5612251 (1997-03-01), Lee
patent: 5851842 (1998-12-01), Katsumata et al.
patent: 6066516 (2000-05-01), Miyasaka
patent: 6271062 (2001-08-01), Nakata et al.
patent: 6455359 (2002-09-01), Yamazaki et al.
patent: 6455360 (2002-09-01), Miyasaka
patent: 6537864 (2003-03-01), Aya et al.
patent: 6573161 (2003-06-01), Miyasaka et al.
patent: 6577386 (2003-06-01), Yoshida et al.
patent: 6602765 (2003-08-01), Jiroku et al.
patent: 6645045 (2003-11-01), Ohkawa
patent: 6746903 (2004-06-01), Miyasaka
patent: 6753212 (2004-06-01), Yamazaki et al.
patent: 6777317 (2004-08-01), Seibel et al.
patent: 6821343 (2004-11-01), Hara et al.
patent: 6861328 (2005-03-01), Hara et al.
patent: 6943086 (2005-09-01), Hongo et al.
patent: 7074728 (2006-07-01), Jang et al.
patent: 59-040526 (1984-03-01), None
patent: 2000-269133 (2000-09-01), None
patent: 2001-168341 (2001-06-01), None
patent: WO 01/97266 (2001-12-01), None
Dairiki Koji
Kasahara Kenji
Miyairi Hidekazu
Shiga Aiko
Shimomura Akihisa
Garber Charles D
Isaac Stanetta D
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Laser beam irradiation method and method of manufacturing a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Laser beam irradiation method and method of manufacturing a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser beam irradiation method and method of manufacturing a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4205010