Laser assisted fiber growth

Details Laser assisted fiber growth Laser assisted fiber growth

1992-02-13

1994-08-09

Chaudhuri, Olik

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

423276, 4234473, 117929, 117931, 117951, 117928, 117952, 117937, 117936, 117904, C30B 2500

Patent

active

053363604

ABSTRACT:
A method of making pure fibers from a parent material utilizing laser energy. A short wavelength laser is used to achieve a diffraction limited focal spot diameter that is smaller than the diameter of the growing fiber. Focused laser beam convergence is used to obtain a fiber growth rate that depends on the fiber tip portion such that the fiber growth rate achieves a value equal to the controlled fiber pulling rate. The present invention achieves vapor-liquid-solid growth of single crystal silicon fibers and whiskers from silane gas and permits the use of other materials in the production of fibers by the vapor-liquid-solid process. The method provides an increase in the allowable ambient pressure and growth temperature and a large and more energy efficient growth velocity as compared to carbon dioxide based laser beam technology.

REFERENCES:
patent: 3226248 (1965-12-01), Talley
patent: 3811917 (1975-05-01), Diefendorf
patent: 3944640 (1976-03-01), Haggerty et al.
patent: 3976444 (1976-08-01), Kuehl
patent: 4197157 (1980-04-01), Haggerty
patent: 4308078 (1981-12-01), Cook
patent: 4345967 (1982-08-01), Cook

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