Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-02-17
2008-09-02
Fahmy, Wael (Department: 2822)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S738000, C438S735000, C438S705000, C438S690000, C257SE21598
Reexamination Certificate
active
07419915
ABSTRACT:
A method using an etchant and a laser for localized precise heating enables precise etching and release of MEMS devices with improved process control while expanding the number of materials used to make MEMS, including silicon-dioxide patterned films buried in and subsequently released from bulk silicon, as a direct write method of release of patterned structures that enables removal of only that material needed to allow the device to perform to be precisely released, after which, the bulk material can be further processed for additional electrical or packaging functions.
REFERENCES:
patent: 5876187 (1999-03-01), Forster et al.
patent: 2003/0003619 (2003-01-01), Winer et al.
patent: 2006/0115965 (2006-06-01), Abraham
Bloomstein et al., “Laser-chemical three-dimensional writing for microelectromechanics and application to standard-cell microfluidics”, J. Vac. Sci. Technol. B 10(6), Nov./Dec. 1992, pp. 2671-2674.
Abraham Margaret H.
Helvajian Henry
Janson Siegfried W.
Fahmy Wael
Novacek Christy L
Reid Derrick Michael
The Aerospace Corporation
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