Laser apparatus and method for measuring stress in a thin film u

Details Laser apparatus and method for measuring stress in a thin film u Laser apparatus and method for measuring stress in a thin film u

1990-08-14

1992-07-28

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Optical or pre-photocell system

356371, 250226, G01N 2186, G01B 1130

Patent

active

051343037

ABSTRACT:
In accordance with the present invention, an apparatus and a method for measuring the radius of curvature of a surface using laser beams of multiple wavelengths are provided. The present invention avoids poor measurement due to destructive interference of the beams reflected at a thin film's upper and lower surfaces. The present invention is applicable to laser reflection stress measurement apparatuses of both scanning and beam-splitting types.

REFERENCES:
patent: 3857637 (1974-12-01), Obenreder
patent: 4865445 (1989-09-01), Kuriyama et al.
patent: 4900940 (1990-02-01), Nakamura
A. Segmuller et al., "Automatic x-ray diffraction measurement of the lattice curvature of substrate wafers for the determination of linear strain patterns," J. Appl. Physics. 51(12), pp. 6225-6230, Dec. 1980.
A. K. Sinha et al., "Thermal stresses and cracking resistance of dielectric films (SiN, Si.sub.3 N.sub.4, and SiO.sub.2) on Si substrates," J. Appl. Phys. 49(4), pp. 2423-2426, Apr. 1978.
P. Flinn, "Principles and Applications of Wafer Curvature Techniques for Stress Measurements in Thin Films," Thin Films: Stresses and Mechanical Properties MRS Proceedings, vol. 130, ed. Bravman, Nix, Barnett, Smith, pp. 41-51, 1989.
E. Kobeda et al., "In situ stress measurements during thermal oxidation of silicon," J. Vac. Schl. Technol. B 7(2), pp. 163-166, Mar./Apr. 1989.
J. T. Pan et al., "In situ stress measurement of refractory metal silicides during sintering," J. Appl. Phys. 55(8), pp. 2874-2880, Apr. 15, 1984.

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