Electric heating – Metal heating – By arc
Reexamination Certificate
2004-05-03
2008-11-25
Evans, Geoffrey S (Department: 1793)
Electric heating
Metal heating
By arc
C219S121750, C359S623000, C359S629000, C438S487000
Reexamination Certificate
active
07456371
ABSTRACT:
The present invention provides a laser apparatus including a transmission-variable mirror and a method for forming a semiconductor device using the apparatus. For crystallizing an amorphous semiconductor film by irradiation of laser beams, a top surface and a back surface of the amorphous semiconductor film are irradiated with the laser beams. In this case, the transmission-variable mirror is used for dividing a laser light emitted from a laser source.
REFERENCES:
patent: 4020319 (1977-04-01), Shepard et al.
patent: 4069080 (1978-01-01), Osborne
patent: 4174476 (1979-11-01), Boling et al.
patent: 4234356 (1980-11-01), Auston et al.
patent: 4576436 (1986-03-01), Daniel
patent: 4659422 (1987-04-01), Sakurai
patent: 4925273 (1990-05-01), Maisenbacher et al.
patent: 5048946 (1991-09-01), Sklar et al.
patent: 5219786 (1993-06-01), Noguchi
patent: 5325381 (1994-06-01), Paoli
patent: 5422758 (1995-06-01), Lawson
patent: 5515194 (1996-05-01), Kanterakis et al.
patent: 5517768 (1996-05-01), Aviv
patent: 5612251 (1997-03-01), Lee
patent: 5767003 (1998-06-01), Noguchi
patent: 5798867 (1998-08-01), Uchida et al.
patent: 5854803 (1998-12-01), Yamazaki et al.
patent: 5897799 (1999-04-01), Yamazaki et al.
patent: 5900980 (1999-05-01), Yamazaki et al.
patent: 5910262 (1999-06-01), Baumgart et al.
patent: 5923966 (1999-07-01), Teramoto et al.
patent: 5948291 (1999-09-01), Neylan et al.
patent: 5952058 (1999-09-01), Xuan
patent: 6020045 (2000-02-01), Chen et al.
patent: 6038075 (2000-03-01), Yamazaki et al.
patent: 6080643 (2000-06-01), Noguchi et al.
patent: 6087625 (2000-07-01), Iso
patent: 6091047 (2000-07-01), Miyakawa et al.
patent: 6117752 (2000-09-01), Suzuki
patent: 6171890 (2001-01-01), Adachi et al.
patent: 6210996 (2001-04-01), Yamazaki et al.
patent: 6229639 (2001-05-01), Ozarski et al.
patent: 6242291 (2001-06-01), Kusumoto et al.
patent: 6266167 (2001-07-01), Klug et al.
patent: 6300176 (2001-10-01), Zhang et al.
patent: 6322625 (2001-11-01), Im
patent: 6426245 (2002-07-01), Kawasaki et al.
patent: 6468842 (2002-10-01), Yamazaki et al.
patent: 6548370 (2003-04-01), Kasahara et al.
patent: 6555449 (2003-04-01), Im et al.
patent: 6599788 (2003-07-01), Kawasaki et al.
patent: 6632711 (2003-10-01), Sugano et al.
patent: 6657154 (2003-12-01), Tanabe et al.
patent: 6730550 (2004-05-01), Yamazaki et al.
patent: 6753212 (2004-06-01), Yamazaki et al.
patent: 6835675 (2004-12-01), Yamazaki et al.
patent: 6927109 (2005-08-01), Tanaka et al.
patent: 6974731 (2005-12-01), Yamazaki et al.
patent: 7029996 (2006-04-01), Im et al.
patent: 7179698 (2007-02-01), Yamazaki et al.
patent: 7319056 (2008-01-01), Im et al.
patent: 2002/0048864 (2002-04-01), Yamazaki et al.
patent: 2003/0003636 (2003-01-01), Grigoropoulos et al.
patent: 2003/0119286 (2003-06-01), Im et al.
patent: 2003/0203656 (2003-10-01), Kasahara et al.
patent: 2007/0202668 (2007-08-01), Im et al.
patent: 1 816 673 (2007-08-01), None
patent: 56-064480 (1981-06-01), None
patent: 03-062971 (1991-03-01), None
patent: 3-189086 (1991-08-01), None
patent: 04-364031 (1992-12-01), None
patent: 7-266064 (1995-10-01), None
patent: 09-260676 (1997-10-01), None
patent: 11-219133 (1999-08-01), None
patent: 11-347775 (1999-12-01), None
patent: 2000-150412 (2000-05-01), None
patent: 97/045827 (1997-12-01), None
patent: 01/018854 (2001-03-01), None
K. Shimizu et al., “High-Mobility Poly-Si Thin-Film Transistors Fabricated by a Novel Excimer Laser Crystallization Method,” IEEE Transactions on Electron Devices, vol. 40, No. 1, pp. 112-117, 1993.
F. Secco d'Aragona, “Dislocation Etch for (100) Planes in Silicon,” J. Electrochem Soc., vol. 119, No. 7, pp. 948-951, 1972.
Specification and Drawings of U.S. Appl. No. 09/988,389.
Kasahara Kenji
Kawasaki Ritsuko
Ohtani Hisashi
Tanaka Koichiro
Evans Geoffrey S
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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