Laser apparatus and laser annealing method

Electric heating – Metal heating – By arc

Reexamination Certificate

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C219S121750, C359S623000, C359S629000, C438S487000

Reexamination Certificate

active

07456371

ABSTRACT:
The present invention provides a laser apparatus including a transmission-variable mirror and a method for forming a semiconductor device using the apparatus. For crystallizing an amorphous semiconductor film by irradiation of laser beams, a top surface and a back surface of the amorphous semiconductor film are irradiated with the laser beams. In this case, the transmission-variable mirror is used for dividing a laser light emitted from a laser source.

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